Transformers / Inductors | FOSO

FWPTRM10V241J

1.

Inductance ： L(10-12):240±5%uH 70KHZ , 1.0V

2.

Leakage inductance: 5uH MAX 70KHZ , 1.0V

FWPTRM8V601J

1.

Inductance ： L(6-8):600uH±5% 50KHZ , 1.0V

2.

Leakage inductance: 10uH MAX 70KHZ , 1.0V

FWPTRM8V342J

1.

Inductance ： L(12-1):3400uH±5% 100KHZ , 1.0V

2.

Leakage inductance: 40uH MAX 100KHZ , 1.0V

FWPTRM8V301J

1.

Inductance ： L(1-12):300uH±5% 100KHZ , 1.0V

2.

Leakage inductance: 10uH MAX 100KHZ , 1.0V

FWPTRM8V172J

1.

Inductance ： L(1-3):1.7mH±5% 50KHZ , 1.0V

2.

Leakage inductance: 55uH MAX 50KHZ , 1.0V

FWPTRM6V111J

1.

Inductance: L(F-2):110uH±5% 100KHZ, 0.6V

2.

Hi-Pot:COIL-CORE: AC 60Hz 1000V 1mA 3S

FWPTRM6SMD122M-2

1.

Inductance: L(4-1)=1.2mH ±20% 1KHZ, 1.0V

2.

Hi-Pot: N1-N2,N3: AC 3000V 5mA 10S

FWPTRM5V502J

1.

Inductance ： L(4-a):5mH ±5% 100KHZ , 1.0V

2.

Leakageinductance ： 100uHMAX 100KHZ , 1.0V

FWPTRM5V342J

1.

Inductance ： L(6-2):3.4mH ±5% 50KHZ , 1.0V

2.

Leakageinductance ： 240uHMAX 50KHZ , 1.0V

FWPTRM5V122J

1.

Inductance ： L(1-4)=11.75uH±5% 1KHZ , 0.1V

2.

DCR： (1-4)＜9.8Ω (2-3)＜204Ω

FWPTPQ5050V801J

1.

Inductance: L =800uH±5% 1KHZ 1V

2.

Hi-pot: P-S AC50HZ 4000V 2mA 3SEC

FWPTPQ4025V122J-2

1.

Inductance ： L(1-3):1200uH±5% 30KHZ , 1.0V

2.

Leakage Inductance ： 29uH MAX 30KHZ、1.0V

FWPTPQ4025V122J

1.

Inductance ： L(1-3):1200uH±5% 30KHZ , 1.0V

2.

Leakage Inductance ： 27.3uH MAX 30KHZ、1.0V

FWPTPQ3225V801J-2

1.

Inductance ： L(1-3):800uH±5% 50KHZ , 1.0V

2.

Leakage Inductance ： 6uH MAX 50KHZ、1.0V

FWPTPQ3225V450J

1.

Inductance ： L（ 2-P） 45uH±5% 100KHZ , 0.9V

2.

Leakage Inductance ： 5uH MAX 100KHZ、0.9V

FWPTPQ3225V152J

1.

Inductance ： L(2-3):1.5mH±5% 40KHZ , 1.0V

2.

Leakage Inductance ： 39uH MAX 40KHZ、1.0V

FWPTPQ3220V901J-1

1.

Inductance ： L(6-4):900uH±5% 50KHZ , 1.0V

2.

Leakage Inductance ： 6uH MAX 50KHZ、1.0V

FWPTPQ3220V701J-4

1.

Inductance ： L(1-2):0.7mH±5% 30KHZ , 1.0V

2.

Leakage Inductance ： 10uH MAX 30KHZ、1.0V

FWPTPQ3220V551K

1.

Inductance ： L(1~3)=550uH±10% 1KHZ ,1V

2.

Hi-Pot:N1,N5-N2,N3,N4= AC 2000V 3mA 10S

FWPTPQ3220V102J

1.

Inductance ： L(1-2):1.0mH±5% 30KHZ , 1.0V

2.

Leakage Inductance ： 20uH MAX 30KHZ、1.0V

FWPTPQ2625V901J

1.

Inductance: L(1-3):900uH±5% 50KHZ 、 1V

2.

Leakage Inductance ： 6uH MAX 50KHZ、1V

FWPTPQ2625V861K-2

1.

Inductance ： L(1~3)=864uH±10% 100KHZ ,1V

2.

Hi-Pot:P-S: AC 50HZ 3750V 3mA 5S

FWPTPQ2625V801J-4

1.

Inductance: L(4-2):800uH±5% 40KHZ 、 1V

2.

Leakage Inductance ： 8uH MAX 40KHZ、1V

FWPTPQ2625V751J-5

1.

Inductance: L(3-1):750uH±5% 60KHZ 、 1V

2.

Leakage Inductance ： 4.8uH MAX 60KHZ、1V

FWPTPQ2625V351J

1.

Inductance: L(7-4):350uH±5% 40KHZ, 1V

2.

Hi-Pot:N1-N2: DC 60Hz 500V 1.0mA 3S

FWPTPQ2620V751J

1.

Inductance: L(1-3):750uH±5% 50KHZ 、 1V

2.

Leakage Inductance ： 10uH MAX 50KHZ、1V

FWPTPQ2620V551L

1.

Inductance: L(1~3)=550uH±15% 1KHZ,1V

2.

Hi-Pot:P-S: AC 2500V 3mA 3S, S-CORE: AC 2500V 3mA 3S

FWPTPQ2620V121K

1.

Inductance: L(1~3)=750uH±10% 1KHZ ,1V

2.

Hi-Pot:P-S: AC 2000V 2mA 3S P,S-CORE: AC1000V 2mA 3S

FWPTPQ2620V102J

1.

Inductance: L(1-3):1.0mH±5% 40KHZ 、 1V

2.

Leakage Inductance ： 15uH MAX 40KHZ、1V

FWPTPQ2016V701K

1.

Inductance: L(5-4)=700uH±10% 10.0KHZ 50mv

2.

LK: L(S-4)=20.0uH MAX 100.0KHZ 50mv

FWPTPQ2016V152K

1.

Inductance: L(1-3)=1550uH±10% 1KHz 1V

2.

Hi-Pot: P-S: AC 2500V 3mA 3S S-core: AC 2500V 3mA 3S

FWPTPOT3019V780K

1.

Inductance:L（ 4-5） =78.4uH±10% 100KHz 1V

2.

LK（ 4-5） =0.78uH MAX 100KHz 1V

FWPTEVD30H140J

1.

Inductance ： L(6-7)=14.7uH±3% 10KHZ , 0.05V

2.

LK ：L(6-7)=500uH MAX 10KHZ , 0.05V short N1,N3

FWPTETD59H222K

1.

Inductance:L（ 5,6,7-1,2,3） =22.39mH±10% 1KHz 1V

2.

Hi-Pot: P-S: AC 50HZ 1600V 2mA 2S

FWPTETD49H510K

1.

Inductance:L(1,2,10-12,13,20)=51.2uH±10% 1KHz 1V

2.

Hi-Pot: coil-core: AC 50HZ 500V1mA 3S

FWPTETD39V331K

1.

Inductance:L（ 1-5） =330uH±10% 100KHz 1V

2.

Hi-Pot: P-S: AC 50HZ 4000V 3mA 60S

FWPTETD39H182K

1.

Inductance:L(1~3)=1.8mH±10% 1KHZ,0.25V

2.

LK:L(1-3)=65.0μHmax 100KHz,0.25V Short Other Pins

FWPTETD34H141K

1.

Inductance: L(6,5-3,4)=138uH±10% 1KHZ, 1.0V

2.

DCR(6,5-3,4)= 80mΩ REF DCR (1-2)=22mΩ REF

FWPTETD34H112J-2

1.

Inductance: L (1-2) : 1.1mH±5% 50KHZ 1.0V

2.

Leakage Inductance ： 196uH±4% 50KHZ 1.0V

FWPTETD34H112J

1.

Inductance: L(1-2):1.1mH±5% 50KHZ, 1.0V

2.

LK: 203uH±4% 50KHZ, 1.0V

FWPTETD34H102J-A

1.

Inductance: L (1,2-4,5) =1mH±5% 1KHz 1V

2.

Hi-Pot: P - S: AC 4000V 2mA 2S

FWPTETD29H462J

1.

Inductance: L(6-7)=4.59mH±5% 1KHz 1V

2.

Hi-Pot: P-S: AC 1500V 5mA 3S

FWPTETD29H162J

1.

Inductance: L(6-7)=1.6mH±5% 1KHz 1V

2.

Hi-Pot: P-S: AC 4000V 2mA 60S

FWPTER40H421K

1.

Inductance: L (1-5)=417uH±10%, 1KHZ 0.1V

2.

LK: L (1-5)=8.34uH REF 100KHz 1V

FWPTER35H262J

1.

Inductance: L(8-10):2.6mH±5% 20KHZ , 1.0V

2.

Leakage Inductance: 800uH±4% 20KHZ、1.0V

FWPTER28V402K

1.

Inductance:L(6-7)=4mH±10% 1KHz 1V

2.

LK:L( 6-7)=150uH MAX 1KHz 1V (Short Pin10-18 side)

FWPTER7.5SMD500K-2

1.

Inductance: L(3-4)= 50.0uH±10% 10.0KHZ 0.1V

2.

LK : L(3-4)= 3.0uH MAX 100.0KHZ 0.1V

FWPTEPC29H132J

1.

Inductance: L(12-11):1.3mH±5% 50KHZ , 1.0V

2.

Leakage inductance: L(12-11):264uH±4% 50KHZ , 1.0V

FWPTEPC19H112J

1.

Inductance: L((11~9)): 1.15mH±10% 1.0KHz,1.0V

2.

Hi-Pot: P-S 4.0 KV 2mA 3SEC

FWPTEPC13H651K

1.

Inductance: L(4-5):650uH±5% 100KHZ , 0.6V

2.

BDCR: (4-5)=2.3Ω MAX

FWPTEPC13H102K

1.

Inductance: L(1-4):1mH±10% 80KHZ, 1.0V

2.

LK: L(1-4): 140uH

FWPTEP17H150K

1.

Inductance: L(2-3)=15uH±10% 50KHz 0.1V

2.

DCR: (2-3)=(7-6)=32mΩ MAX

FWPTEP13SMD131K

1.

Inductance: L(3-4): 127uH±10% (1KHZ 1V)

2.

DCR: R(3-4)=0.5Ω Max

FWPTEP7SMD300K

1.

Inductance: L (1-8)=(4-5): 30uH±10%, ( 100KHZ 0.1V)

2.

DCR:(1-8)=(4-5)=100mΩ MAX

FWPTEP7H502M

1.

Inductance: L(1-6):5mH±30%, L (3-4):570mH±30% (1KHZ 0.3V)

2.

DCR:(1-6)=2.0Ω±15%,(3-4)=108Ω±15%

FWPTEI33V171J

1.

Inductance: L(10-12):170uH±5% 100KHZ , 1.0V

2.

DCR: (12-10)=0.16Ω MAX (8-7)=0.42Ω MAX

FWPTEI30V232M

1.

Inductance:L(1-2) =2.3mH±20% 1KHz 1V

2.

Hi-Pot: P-S: AC3000V 1mA 10S Coil-Coil: AC500V 1mA 10S

FWPTEFD30H781K

1.

Inductance:L（ 2-4） =780uH±10% 1KHz 1V

2.

LK（ 2-4） =6uH MAX 100KHz 1V

FWPTEFD25H232K

1.

Inductance:L(10-9) =2.3mH±10% 1KHz 1V

2.

Hi-Pot: Coil-Coil: AC 1200V 3mA 2S

FWPTEFD25H132J

1.

Inductance:L（3-5） =1.35mH±5% 1KHz 1V

2.

Hi-Pot: P-S: AC 4000V 3mA 60S

FWPTEFD25H102J

1.

Inductance: L(3-1)=1mH±5% 1KHz 1V

2.

DCR: (3-1)=1.5Ω MAX (10-8)=0.8Ω MAX

FWPTEFD20SMD510K

1.

Inductance:L（1-12） =51uH±10% 200KHz 1V

2.

Hi-Pot: P-S: AC 50HZ 1500V 1mA 2S

FWPTEFD20SMD420J

1.

Inductance:L（1-10） =41uH±2uH 1KHz 1V

2.

Hi-Pot: Coil-Coil: AC 50HZ 500V 2mA 3S

FWPTEFD20H202K

1.

Inductance:L（ 3-4） =2.0mH±10% 1KHz 1V

2.

Leakage Inductance ： L( 3-4)=20uH MAX 100KHz 1V

FWPTEFD20H112K

1.

Inductance:L（ 2-1） =1108uH±10% 1KHz 1V

2.

Leakage Inductance ： L( 1-2)=33.2uH REF 100KHz 1V

FWPTEFD15SMD500K

1.

Inductance: L(1-10): 50uH±10%, (1.0KHZ 1.0V)

2.

Dielectric Strength: P-S AC 1500V 1mA 60S

FWPTEFD15H821J

1.

Inductance: L (8-4): 820uH±10%, 1.0KHZ 0.25V

2.

Operating Temperature: -30 to 115℃

FWPTEFD12SMD380L

1.

Inductance: L (1-8): 65uH±10%, (1.0KHZ 1.0V)

2.

Dielectric Strength: P-S AC 1500V 1mA 60S

FWPTEFD12SMD650K

1.

Inductance: L (1-8): 38uH±15%, ( 1.0KHZ 1.0V)

2.

Dielectric Strength: P-S AC 1500V 1mA 60S

FWPTEF32H102J

1.

Inductance:L(1-3): 1.0mH±5% 1.0KHZ 、1.0V

2.

Hi-Pot:P-S: AC 4000V 2mA 3S

FWPTEF25V551K

1.

Inductance:L(4-5): 550uH±10% 10.0KHZ 、1.0V

2.

Hi-Pot:P-S: AC 4000V 1mA 60S

FWPTEF25V122K

1.

Inductance:L(2-1): 1.17mH±10% 1.0KHZ 、1.0V

2.

LK: L=11.7uH MAX 1.0KHz 1.0V

FWPTEF25H472J

1.

Inductance:L(1-4): 1.27mH±5% 1.0KHZ 、1.0V

2.

L(8-5): 4.71mH±5% 1.0KHZ 、1.0V

FWPTEF20V122J

1.

Inductance:L(1-3): 1.2mH±4% 1.0KHZ, 1.0V

2.

Hi-Pot:P-S: AC 3000V 3mA 1S, S-CORE: AC 1000V 3mA 1S

FWPTEF20H821K

1.

Inductance:L（ 1-2） =825uH±10% 1KHz 0.25V

2.

Leakage Inductance ： L( 1-2)=40uH MAX 100KHz 0.25V

FWPTEF20H801K-1

1.

Inductance:L(1-3): 791uH±10% 90.0KHZ, 1.0V

2.

DCR:(1-2)=700mΩ±15%

FWPTEF20H731J

1.

Inductance:L(1-2): 2735uH±5% 1.0KHZ 、1.0V

2.

Hi-Pot:N1-N5: AC 500V 3mA 3S

FWPTEF20H352J

1.

Inductance:L(3-1): 3.55mH±7% 1KHZ 、1V

2.

DCR：(3-1)=2.8Ω MAX

FWPTEF20H212K

1.

Inductance:L(3-1): 2.12mH±10% 10.0KHZ 、0.1V

2.

Hi-Pot:P-S: AC4500V 5mA 1S

FWPTEF20H102J

1.

Inductance: L(2-1):1000uH±5% 20KHZ, 0.25V

2.

LK: 22uH MAX 20KHZ,0.25V

FWPTEF16V451K

1.

Inductance:L(8-1): 45uH±5% 1.0KHZ 、1V

2.

L(4-5): 45.6uH±5% 1.0KHZ 、1V

FWPTEF16V201M

1.

Inductance:L(2-5): 200uH±20% 10.0KHZ 、0.05V

2.

DCR：(2-1)=165mΩ MAX

FWPTEF16V182K

1.

Inductance:L(6-4)=1.8mH±10% 1KHz 0.25V

2.

LK: L(6-4)≤50uH 100KHz 0.25V

FWPTEF12.6V562J

1.

Inductance ：L(4-5):5.6mH±5% 1.0KHZ ,1.0V

2.

Hi-Pot:P-S: AC 4000V 3mA 60S

FWPTEF12.6H262K

1.

Inductance: L(2-1): 2.65mH±10% 1.0KHZ, 0.25V

2.

Hi-Pot: P-S: AC 3750V 0.5mA 3S

FWPTEF12.6H122M

1.

Inductance: L(5-1) = (10-6) = 12.0mH±30%, 10.0KHZ, 0.05V

2.

Hi-Pot: P-S Applied with 0.5KV, 2mA, 3S

FWPTEE55H221K

1.

Inductance:L(3,4,5-10,11,12)=220uH±10% 1.0KHZ 1.0V

2.

Hi-Pot:P, S-CORE 1.0KV 5mA 3S

FWPTEE42V143M

1.

Inductance: L(3-4)=14.7mH±25% 1.0KHZ 0.25V

2.

Hi-Pot: P-S AC 3.75KV 0.5mA 10S

FWPTEE42H201M

1.

Inductance:L(6-4)=200uH±20% 100KHZ 1V

2.

Hi-Pot:P-S AC 1.0KV 5mA 3S, P,S-CORE 1.0KV 5mA 3S

FWPTEE36H511J

1.

Inductance: L (2-7)= 511uH ±7% (473-549uH)

2.

Hi-Pot: N1, N3—N2 AC 1650V 3mA 2S

FWPTEE30V100M

1.

Inductance: L(1-2)=100uH±20% 60KHZ 1V

2.

Hi-Pot: N2-N3,N3-N4, N4-CORE AC 3.0KV 5mA 3S

FWPTEE30H341K

1.

Inductance: L(1-3):342.5uH±10% 1.0KHZ ,1.0V

2.

Hi-Pot:P-S: AC 3000V 2mA 60S, P-CORE: AC 3000V 1mA 60S

FWPTEE25V651K

1.

Inductance:L(2-1):0.65mH±10% 100.0KHZ 、 0.25V

2.

Leakage Inductance ：36uH MAX 100KHZ 、0.25V

FWPTEE25H112K

1.

Inductance ：L(4-3):1.1mH±10% 100.0KHZ ,1.0V

2.

Hi-Pot:P-S: AC 3000V 2mA 3S

FWPTEE20H122K

1.

Inductance: L(4-3):1.16mH±10% 10.0KHZ, 0.05V

2.

LK: 50uHMAX 10.0KHZ, 0.05V

FWPTEE19V222K

1.

Inductance:L(9-10):2.2mH±10% 10.0KHZ 、0.1V

2.

DCR：(9-10)=3.0Ω MAX

FWPTEE16V252K

1.

Inductance:L(3-1):2.5mH±12% 1.0KHZ 、 0.3V

2.

Leakage Inductance ：65uH MAX 100KHZ 、1V

FWPTEE16V172K

1.

Inductance:L（3-1）=1700uH±10% 50KHz 1V

2.

Leakage Inductance ：L（3-1 ）=6uH MAX 50KHz 1V

FWPTEE16H812K

1.

Inductance:L(1-2):8.1mH±12% 1.0KHZ ,1.0V

2.

Hi-Pot:P-S: AC 3000V 5mA 3S, P/S-CORE: AC 500V 5mA 3S

FWPTEE16H202J

1.

Inductance:L(2-1):2.0mH±5% 100KHZ , 0.7V

2.

LK: 52uH MAX 100KHZ, 0.7V

FWPTEE16H172K

1.

Inductance:L(4-1):1.75mH±10% 1.0KHZ 、1.0V

2.

DCR：(4-1)=1.3Ω MAX

FWPTEE13V352J

1.

Inductance ：L(1-2):3.5mH±5% 1.0KHZ ,0.25V

2.

Hi-Pot:P-S: AC 1500V 5mA 5S

FWPTEE13V302N

1.

Inductance:L(8-9):3mH min100KHZ 、0.6V

2.

DCR：(8-9)=1.07Ω MAX

FWPTEE13V172J

1.

Inductance:L(4-5):1.7mH±5% 100KHZ, 0.8V

2.

LK: 16uH MAX 100KHZ, 0.8V

FWPTEE13V142K

1.

Inductance ：L(1-5):1.4mH±10% 1.0KHZ ,0.3V

2.

Hi-Pot:P-S: AC 2500V 3mA 3S

FWPTEE13H602J

1.

Inductance:L(2-1):6.0mH±5% 60KHZ, 1V

2.

LK:480uH MAX 60KHZ, 1V

FWPTEE13H402J

1.

Inductance:L(3-5):4.0mH±5% 60KHZ,1V

2.

LK:78uH MAX 60KHZ, 1V

FWCC2319SERIES

1.

Inductance:10~100mH

2.

Frame Core Choke Series Product

FWCC1614SERIES

1.

Inductance:10~100mH

2.

Frame Core Choke Series

FWCMUU16SERIES

1.

Inductance:1.5~30mH

2.

EMI Series

FWCMUU10SERIES

1.

Inductance:3.3~51mH

2.

EMI Series

FWCMUU09SERIES

1.

Inductance:0.47~33mH

2.

EMI Series

FWCMUT20SERIES

1.

Inductance:0.6~82mH

2.

EMI Series

FWCMET28SERIES

1.

Inductance:1.8~68mH

2.

EMI Series

FWCMET24SERIES

1.

Inductance:2.2~82mH

2.

EMI Series

FWDRI1415B-472K

1.

Inductance:4.7mH±10%

2.

DCR:3.6Ω MAX

FWDRI0810T472K

1.

Inductance:4.7mH±10%

2.

DCR: 13.6Ω MAX

FWDRI0608T472K

1.

Inductance:4.7mH±10%

2.

1.0KHZ , 0.3V

FWDRI0507B220M

1.

Inductance: 22uH±20%

2.

DCR: 130mΩ MAX

FWCMT221408181M

1.

Inductance: 180uHmin

2.

DCR:(1-4)=(3-2)=1.0mΩ MAX

FWCMT161006122M

1.

Inductance ：L(3-2):1.194mH±25% 1.0KHZ , 1.0V

2.

Hi-Pot:N1,N2-N3,N4: AC 60Hz 1500V 5mA 3S

FWCMT160905501M

1.

Inductance: L(2-1):500uH±20% 1.0KHZ , 1.0V

2.

Inductance: L(3-4)=2.5mH±20% 1.0KHZ , 1.0V

FWCMT100605123M

1.

Inductance ：L(2-1):11.5mH±25% 1.0KHZ , 1.0V

2.

Hi-Pot:Coil-Core: AC 60Hz 800V 3mA 2S

FWCMT100604131M

1.

Inductance:L(1-2)=(6-4):130uH MIN 10.0KHZ , 0.1V

2.

DCR：(1-2)=(6-4)=44mΩ MAX

FWCMT068060101L

1.

Inductance:L(1-2):100uH±15% 1.0KHZ , 1.0V

2.

DCR：(1-2)=0.053Ω MAX

FWCMT6826D701M

1.

Inductance: L(1-2):700uH±20% 1.0KHZ , 1.0V

2.

Temperature:-40~115 ℃

FWPTEE12H303N

1.

Inductance ：L(2-1)=(4-3):30mH min 1.0KHZ , 0.3V

2.

Hi-Pot:Coil-Core: AC 60Hz 1000V 1mA 5S

FWPTEE10V402K

1.

Inductance: L(3-4):4000uH±10% 1.0KHZ , 1.0V

2.

Temperature:-30 to 115 ℃ 2UEW Wire

FWPTEE10V252J

1.

Inductance: L(8-1):2500uH±5% 40KHZ, 1.0V

2.

Temperature:-30 to 115 ℃ 2UEW-B-0.13mm Wire

FWPTEE10V202K

1.

Inductance ：L(3-1):2000uH±5% 100KHZ , 0.4V

2.

Hi-Pot:P-S: AC 60Hz 1000V 3mA 2S

FWPTEDR20V471J

1.

Inductance: L (2-6) =470uH±5% 1 KHZ 0.25V

2.

HI-POT: coil-core AC 2000V 1 mA 5S

FWPTEE8.3H851J

1.

Inductance: L(1-2):0.85mH±5% 100KHZ, 0.2V

2.

Hi-Pot:N1-N2: AC 60Hz 500V 1mA 3S

Contact

Visit & mailing address

Block 13, Technology Oasis, No. 8 Haining Avenue, Haining, Zhejiang, China

Tel: +86-573-8787-3600
Email: contact@fosopower.com

FOSO office

Get in Touch

Get in Touch

St. Petersburg

New Delhi

Foshan

Contact

St. Petersburg · Russia

«FOSO» Limited Liability Company

Address: 198206, St. Petersburg, inner territory of the city municipal district Sosnovaya Polyana, Petergofskoe highway, 73 liter T, 1-N, office 13/2
Tel: +7-921-562-03-56 / +7-921-386-93-60
Email: evgen@fosopower.com

Get in Touch

Get in Touch

St. Petersburg

New Delhi

Foshan

Contact

New Delhi · India

FOSO New Delhi office

Address: E881, Saraswati Vihar, Pitam Pura, Delhi, India
Tel: +91 8826240270 / +91 7292093370
Email: sameer@fosopower.com / deepak@fosopower.com

FOSO New Delhi office

Get in Touch

Get in Touch

St. Petersburg

New Delhi

Foshan

Contact

Foshan · China

FOSO Foshan Office

Address: Lingde International Building, No. 42 Wenming West Road, Ronggui, Shunde, Foshan, Guangdong, China
Tel: 15868196171 / 18924893715
Email: jessica.shen@fosopower.com / mark.liu@fosopower.com

Lingde International Tower

Get in Touch

Get in Touch

FOSO POWER TECHNOLOGY at APEC 2019, USA

20 APRIL 2017

....